Self-aligned copper interconnect structure and method of manufac

Details Self-aligned copper interconnect structure and method of manufac Self-aligned copper interconnect structure and method of manufac

1999-04-21

2000-10-31

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438636, 438257, 438653, 438669, 438685, 257762, 257768, 257753, H01L 214763, H01L 2945

Patent

active

061402389

ABSTRACT:
A copper interconnect structure is formed in a semiconductor device using self-aligned copper or tungsten via pillars to connect upper and lower copper interconnect layers separated by a dielectric. The lower copper interconnect layer is formed on an underlying layer. The via pillars are formed on the lower copper interconnect layer. The copper upper interconnect layer is formed to make electrical contact to exposed upper surfaces of the via pillars.

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patent: 6030896 (2000-02-01), Brown
patent: 6037223 (2000-03-01), Su et al.

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