Self-aligned contact window

Details Self-aligned contact window Self-aligned contact window

1991-12-30

1999-03-09

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438696, H01L 21336, H01L 21441, H01L 23522

Patent

active

058800220

ABSTRACT:
A self aligned contact to the substrate in the region between two gate electrodes is formed by depositing a conformal dielectric layer and patterning to form a contact window. The conductive elements of the gate electrode are not contacted because of etch rate differentials between the conformal dielectric and the insulating elements of the gate structure.

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