Self-aligned contact process using low density/low k dielectric

Details Self-aligned contact process using low density/low k dielectric Self-aligned contact process using low density/low k dielectric

1997-12-31

2000-09-26

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438780, 438303, H01L 214763

Patent

active

061241911

ABSTRACT:
Method and apparatus for fabricating contacts to substrate regions through a low k, low density dielectric. A cap is formed over gates and side spacers are formed along the edges of the gates so as to surround the gates in a relatively dense (e.g., silicon dioxide) insulative material. A low k or low density layer of a polymer or silica aerogel or xerogel material is formed in contact with the substrate covering the gate structures including the spacers. An unlanded contact opening is etched through the low k, low density dielectric with an etchant that provides high selectivity between the insulation surrounding the gate and the low k, low density layer.

REFERENCES:
patent: 5627082 (1997-05-01), Beratan et al.
patent: 5923988 (1999-07-01), Cheng et al.
patent: 5929441 (1999-07-01), Beratan et al.
patent: 5930627 (1999-07-01), Zhou et al.
"Integration of Perfluorocyclobutane (PFCB)", by C.B. Case, C.J. Case, A. Kornblit, M.E. Mills, D. Castillo, R. Liu, Conference Proceedings, ULSI XII.COPYRGT. 1997, Materials Research Society pp. 449-454.
"Nanoporous Silica for Dielectric Constant Less than 2", by Ramos, Roderick, Maskara and Smith, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society pp. 455-461.
"Porous Xerogel Films as Ultra-Low Permittivity Dielectrics for ULSI Interconnect Applications", by Jin, List, Lee, Lee, Luttmer and Havermann, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society pp. 463-469.

Affiliated with

Also associated with

Rating

Self-aligned contact process using low density/low k dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned contact process using low density/low k dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned contact process using low density/low k dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099706