Self-aligned contact process for semiconductor device

Details Self-aligned contact process for semiconductor device Self-aligned contact process for semiconductor device

2005-04-12

2005-04-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S634000, C438S723000, C438S724000, C438S743000, C438S744000, C438S756000, C438S757000

Reexamination Certificate

active

06878612

ABSTRACT:
A semiconductor device manufacturing method that assures required size of flat areas at a wiring overlay nitride film, and forms an SAC structure wherein selectivity is not lowered at corners. A first etching process wherein an insulating film is etched under conditions for forming a vertical opening (vertical conditions) is used to open up the insulating film to a point near the wiring overlay nitride film 105. A second etching process is used wherein the insulating film is opened until the wiring overlay nitride film becomes exposed, by etching under conditions assuring a high ratio of selectivity relative to the wiring overlay nitride film (SAC conditions). Then, a third etching process is used wherein the insulating film located between first and second electrodes is removed by etching under conditions with a low ratio of selectivity relative to the wiring overlay nitride film (SAC conditions).

REFERENCES:
patent: 6329292 (2001-12-01), Hung et al.
patent: 706206 (1996-04-01), None
patent: 03212921 (1991-09-01), None
patent: 2001-284553 (2001-10-01), None
patent: 2001-127039 (2001-11-01), None
patent: 334623 (1998-06-01), None

Affiliated with

Also associated with

Rating

Self-aligned contact process for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned contact process for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned contact process for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3378943