Self-aligned contact process for complementary field-effect inte

Details Self-aligned contact process for complementary field-effect inte Self-aligned contact process for complementary field-effect inte

1992-02-28

1994-02-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, 437 56, 148DIG18, 148DIG133, H01L 21265

Patent

active

052832031

ABSTRACT:
A method for making a NMOS self-aligned contact in CMOS circuits without an extra mask is described. The maskless contact technique makes use of the fact that the blanket N-type implant, self-aligned to exposed field-oxide edge, will not change the P+ diffusion to N-type. The net P+ concentration in the contact region is reduced slightly but does not degrade the PMOS device performance.

REFERENCES:
patent: 4312046 (1982-01-01), Taylor
patent: 5032537 (1991-07-01), Yoshizumi et al.
patent: 5102816 (1992-04-01), Manukonda et al.
patent: 5102827 (1992-04-01), Chen et al.
patent: 5132241 (1992-07-01), Su

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