Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Patent
1996-04-30
1999-05-11
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
257686, 257774, 257737, H01L29/40
Patent
active
059030453
ABSTRACT:
A semiconductor structure includes a stack of two semiconductor chips. An edge of the chips forms a side surface of the stack. Insulation and adhesive is located between the chips, and a wire contacting circuitry on one of the chips extends through the insulation to the side surface. A first conductor contacts the wire on the side surface. The first conductor is self-aligned to the wire and extends above the side surface. The first conductor facilitates pads or connectors on the side surface that are insulated from the semiconductor chips. The self-aligned first conductor is an electroplated or electroless plated metal.
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Bertin Claude L.
Ference Thomas G.
Howell Wayne J.
Brown Peter Toby
International Business Machines - Corporation
Leas James M.
Potter Ray
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