Self-aligned collar and strap formation for semiconductor...

Details Self-aligned collar and strap formation for semiconductor... Self-aligned collar and strap formation for semiconductor...

2006-03-21

2006-03-21

Utech, Benjamin L. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S706000

Reexamination Certificate

active

07015145

ABSTRACT:
A method for fabricating a buried strap forms a dielectric collar along sidewalls of a trench. The trench is formed in a substrate. The trench is filled with a conductive material and the conductive material is recessed in the trench to expose a portion of the collar. A masking layer is deposited in the trench over the exposed portion of the collar. A portion of the masking layer is removed over one side of the collar and a portion of the collar is etched on the one side. A buried strap is formed on the conductive material, which connects to the substrate on the one side.

REFERENCES:
patent: 5981332 (1999-11-01), Mandelman et al.
patent: 6018174 (2000-01-01), Schrems et al.
patent: 6063657 (2000-05-01), Bronner et al.
patent: 6110792 (2000-08-01), Bronner et al.
patent: 6184107 (2001-02-01), Divakaruni et al.
patent: 6297089 (2001-10-01), Coronel et al.

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