Self-aligned cobalt silicide on MOS integrated circuits

Details Self-aligned cobalt silicide on MOS integrated circuits Self-aligned cobalt silicide on MOS integrated circuits

1996-09-11

1998-04-07

Maples, John S.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, H01L 2144

Patent

active

057364613

ABSTRACT:
A method of forming cobalt silicide on source/drain regions and polysilicon gate areas of an MOS integrated circuit uses an improved technique to prevent unwanted oxidation of cobalt or growth of silicide on other areas of device. A thin titanium nitride (or titanium tungsten) film is deposited on top of a cobalt film following the steps of patterning the polysilicon gate, source/drain implant and sidewall oxide spacer deposition and etch. The titanium nitride film allows formation of defect-free cobalt silicide during an elevated-temperature anneal. Without the titanium nitride film, the cobalt is likely to oxidize and/or form cobalt silicide in unwanted regions of the device, which can cause device failure.

REFERENCES:
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4461719 (1984-07-01), Vogel et al.
patent: 4908331 (1990-03-01), Raajmakers
patent: 4920073 (1990-04-01), Wei et al.
patent: 4923822 (1990-05-01), Wang et al.
patent: 5047367 (1991-09-01), Wei et al.
Silicon Processing for the VSLI Era; vol. 2, process integration; Stanley Wolf 1990 (No month).
VSLI Fabrication Principles, Silicon and Gallium Arsenide; Sorab K. Ghandi 1983 (No month).
Metal-Silicon Reaction Rates-the Effects of Capping;Journal of Electronic Materials;vol. 18,No.1;Weizer et al. 1989 (No month).
Formation of Cobalt Silicide under a passivating film of molybdenum of tungsten;Dept. of Electronics Engineering and Institute of Electronics;National Chiao Tung University;Yang et al. 1991-(No month).
Comparison of Cobalt and Titanium Silicides for Salicide Process and Shallow Junction Formation;Intel Corp.;VMIC Conference 6/12-13/89;Wei, et al.
Formation of Self-Aligned TiN/CoSi2 Bilayer from Co/Ti/Si and its Application in Salicide, Diffusion Barrier and Contact Fill;Intel Corp.; VMIC Conference 6/12-13/89;Wei, et al.
Cobalt Silicide Interconnection from a Si/W/Co Trilayer Structure;J. Electrochem Soc.;vol.136,No. 1,Jan. 1989;Lin et al.
The Influence of Oxygen on Cobalt Silicide Formation;Dept. of Physics, University of the Orange Free State;Swart, et al.1990(No month).
A Cobalt Salicide CMOS Process with TiN-Strapped Polysilicon Gates;IEEE Electron Device Letters, vol.12,No.6,Jun. 1991;Pfiester, et al.
Gate Isolation after Cobalt Silicide Processing;Journal of Electronic Materials;vol.19,No.2, 1990; Swartz et al. (No month).
Self-Aligned Silicides or Metals for Very Large Scale Integrated Circuit Applications;J. Vac. Sci. Technol. B4 (6),Nov./Dec. 1986; Shyam P. Murarka.
Application of Self-Aligned CoSi2 Interconnection in Submircometer CMOS Transistors;IEEE Transactions on Electron Devices;vol.23,No.11,Nov. 1989;Broadbent , et al.

Affiliated with

Also associated with

Rating

Self-aligned cobalt silicide on MOS integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned cobalt silicide on MOS integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned cobalt silicide on MOS integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-12898