Self-aligned barrier layers for interconnects

Details Self-aligned barrier layers for interconnects Self-aligned barrier layers for interconnects

2011-04-26

2011-04-26

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C257SE21495, C257SE21485

Reexamination Certificate

active

07932176

ABSTRACT:
An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for making the same are provided. The manganese silicate forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The manganese silicate and manganese silicon nitride also promote strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use. The strong adhesion at the copper-manganese silicate and manganese silicon nitride interfaces also protect against failure by electromigration of the copper during use of the devices. The manganese-containing sheath also protects the copper from corrosion by oxygen or water from its surroundings.

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