Self-aligned air-gap in interconnect structures

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S623000, C438S624000, C438S625000, C438S626000

Reexamination Certificate

active

07871923

ABSTRACT:
An integrated circuit structure comprising an air gap and methods for forming the same are provided. The integrated circuit structure includes a conductive line; a self-aligned dielectric layer on a sidewall of the conductive line; an air-gap horizontally adjoining the self-aligned dielectric layer; a low-k dielectric layer horizontally adjoining the air-gap; and a dielectric layer on the air-gap and the low-k dielectric layer.

REFERENCES:
patent: 6252290 (2001-06-01), Quek et al.
patent: 6346484 (2002-02-01), Cotte et al.
patent: 6380106 (2002-04-01), Lim et al.
patent: 6403461 (2002-06-01), Tae et al.
patent: 6815329 (2004-11-01), Babich et al.
patent: 7078352 (2006-07-01), Beyer et al.
patent: 7405147 (2008-07-01), Edelstein et al.
patent: 7662722 (2010-02-01), Stamper et al.
patent: 2002/0127844 (2002-09-01), Grill et al.
patent: 2005/0184397 (2005-08-01), Gates et al.
patent: 2007/0257368 (2007-11-01), Hussein et al.
patent: 2008/0166870 (2008-07-01), Huang et al.
Daamen, R., et al., “Air Gap Integration for the 45nm Node and Beyond.” IEEE, 2005, pp. 240-242.
Gossett, L. G., et al., “General Review of Issues and Perspectives for Advanced Copper Interconnections Using Air Gap as Ultra-low K Material,” IEEE, 2003, pp. 65-67.
Zhao, X.S., et al., “Characterization of the structural and surface properties of chemically modified MCM-41 material,” Micorporous and Mesoporous Materials 41, 2000, pp. 37-47.

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