Self-adaptive program delay circuitry for programmable memories

Details Self-adaptive program delay circuitry for programmable memories Self-adaptive program delay circuitry for programmable memories

2006-12-19

2006-12-19

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including signal comparison

C365S185200, C365S230060, C365S189090, C365S189050

Reexamination Certificate

active

07151701

ABSTRACT:
A self-adaptive programming circuit for EEPROM is used to automatically tune an erase or write delay, providing an improved programming window. The programming circuit may also provide improvements in data retention for programmed memory cells. The invention can be applied more particularly in the field of EEPROM memories capable of page mode writing operations.

REFERENCES:
patent: 5386388 (1995-01-01), Atwood
patent: 5467309 (1995-11-01), Tanaka
patent: 5537358 (1996-07-01), Fong
patent: 5627784 (1997-05-01), Roohparvar
patent: 5751637 (1998-05-01), Chen
patent: 6032248 (2000-02-01), Curry
patent: 6166962 (2000-12-01), Chen et al.
patent: 6191976 (2001-02-01), Smayling
patent: 6198662 (2001-03-01), Chen et al.
patent: 6219281 (2001-04-01), Chen et al.
patent: 6222768 (2001-04-01), Hollmer et al.
patent: 6249459 (2001-06-01), Chen et al.
patent: 6292394 (2001-09-01), Cohen
patent: 6353556 (2002-03-01), Chen et al.
patent: 6418054 (2002-07-01), Hollmer
patent: 6483751 (2002-11-01), Chen et al.
patent: 6834323 (2004-12-01), Dover et al.
patent: 2002/0031012 (2002-03-01), Chen et al.
patent: 06068686 (1994-03-01), None

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