Selectively oxidized field oxide region

Details Selectively oxidized field oxide region Selectively oxidized field oxide region

1995-12-08

1999-02-09

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, 438753, 438964, 148DIG138, H01L 2176

Patent

active

058693858

ABSTRACT:
A field oxide region is formed with a reduced bird's beak by selectively implanting impurity atoms into the semiconductor substrate to increase the oxidation rate of the substrate and thermally oxidizing the implanted region of the semiconductor substrate. In another embodiment, a gate oxide layer having a differential thickness is formed by implanting impurity atoms into the semiconductor substrate in a selected region wherein a thick portion of the gate oxide is to be formed and thermally oxidizing the semiconductor substrate.

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P.G. Carey et al., "Fabrication of Submicrometer MOSFET's Using Gas Immersion Laser Doping (GILD)," IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986, p. 440.

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