Selectively etching microstructures in a glow discharge plasma

Details Selectively etching microstructures in a glow discharge plasma Selectively etching microstructures in a glow discharge plasma

1986-03-17

1987-03-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29 2535, 156646, 1566591, 156663, 156904, 156345, 20419232, 204298, B44C 122, C03C 1500, C03C 2506

Patent

active

046541187

ABSTRACT:
Selective etching of microelectronic devices comprising crystal substrates s achieved by electrically masking conductive areas thereon which are not to be etched by ionic bombardment. The electrical masking is accomplished by biasing the selected areas with a bias voltage which will repel the ions, which are attracted to all of the unbiased portions of the microelectronic device.

REFERENCES:
patent: 3410774 (1968-11-01), Barson et al.

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