Selectively deposited silicon oxide layers on a silicon...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S369000, C257S412000

Reexamination Certificate

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10925865

ABSTRACT:
A process for selectively depositing a silicon oxide layer onto silicon substrates of different conductivity types is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. Use of the process to produce layers, spacers, memory units, and gates is also disclosed, as well as the structures so produced.

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