Selectively converted inter-layer dielectric

Details Selectively converted inter-layer dielectric Selectively converted inter-layer dielectric

2005-09-13

2005-09-13

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S780000, C438S781000, C438S783000

Reexamination Certificate

active

06943121

ABSTRACT:
An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

REFERENCES:
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6770537 (2004-08-01), Farrar
patent: 2003/0004218 (2003-01-01), Allen et al.
patent: 2003/0057414 (2003-03-01), Dalton et al.
patent: 2004/0061229 (2004-04-01), Moslehi

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