Selective WSix deposition

Details Selective WSix deposition Selective WSix deposition

1996-04-29

1997-04-08

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438641, 438592, 438677, H01L 21312, H01L 2144

Patent

active

056187564

ABSTRACT:
A method for selectively depositing WSi.sub.x is described. Semiconductor device structures are provided in and on a semiconductor substrate wherein WSi.sub.x is to be deposited overlying a first portion of the substrate and wherein WSi.sub.x is not to be deposited overlying a second portion of the substrate. A layer of organic material is provided over the surface of the substrate overlying the second portion of the substrate. A layer of WSi.sub.x is deposited over the surface of the substrate wherein the WSi.sub.x is deposited overlying the first portion of the substrate and wherein the presence of the organic material layer prevents the WSi.sub.x from depositing overlying the second portion of the substrate completing the selective WSi.sub.x deposition in the fabrication of an integrated circuit device.

REFERENCES:
patent: 5231056 (1993-07-01), Sandhu
patent: 5300455 (1994-04-01), Vuillermoz

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