Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-08-30
2011-08-30
Le, Dung A (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S510000, C257S506000, C257SE29286
Reexamination Certificate
active
08008744
ABSTRACT:
A first example embodiment comprises the following steps and the structure formed therefrom. A trench having opposing sidewalls is formed within a substrate. A stress layer having an inherent stress is formed over the opposing trench sidewalls. The stress layer having stress layer sidewalls over the trench sidewalls. Ions are implanted into one or more portions of the stress layer to form ion-implanted relaxed portions with the portions of the stress layer that are not implanted are un-implanted portions, whereby the inherent stress of the one or more ion-implanted relaxed portions of stress layer portions is relaxed.
REFERENCES:
patent: 5498564 (1996-03-01), Geissler et al.
patent: 5960276 (1999-09-01), Liaw et al.
patent: 6258697 (2001-07-01), Bhakta et al.
patent: 6284626 (2001-09-01), Kim
patent: 6498383 (2002-12-01), Beyer et al.
patent: 6657276 (2003-12-01), Karlsson et al.
patent: 6780730 (2004-08-01), Lin
patent: 6882025 (2005-04-01), Yeo et al.
patent: 6984589 (2006-01-01), Tanaka et al.
patent: 2004/0212035 (2004-10-01), Yeo et al.
patent: 2005/0014344 (2005-01-01), Choi
patent: 2005/0020022 (2005-01-01), Grudowski
patent: 2005/0073022 (2005-04-01), Karlsson et al.
patent: 2005/0156274 (2005-07-01), Yeo et al.
patent: 2006/0166419 (2006-07-01), Shimoyama et al.
Cha-Hsin Lin et al., Effect of strain on p-Channel metal-oxide-semiconductor field-effect-transistor current enhancement using stress-modulated silicon nitride films; Applied Physics Letters 87, 262109 (2005); pp. 87-262109-1 to 262109-3.
Lee Jae Gon
Leong Vincent
Ong Shiang Yang
Quek Elgin
Sohn Dong Kyun
Globalfoundries Singapore Pte. Ltd.
Horizon IP Pte. Ltd.
Le Dung A
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