Selective STI stress relaxation through ion implantation

Details Selective STI stress relaxation through ion implantation Selective STI stress relaxation through ion implantation

2006-12-24

2010-06-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C438S450000, C438S424000, C438S508000

Reexamination Certificate

active

07727856

ABSTRACT:
A first example embodiment comprises the following steps and the structure formed therefrom. A trench having opposing sidewalls is formed within a substrate. A stress layer having an inherent stress is formed over the opposing trench sidewalls. The stress layer having stress layer sidewalls over the trench sidewalls. Ions are implanted into one or more portions of the stress layer to form ion-implanted relaxed portions with the portions of the stress layer that are not implanted are un-implanted portions, whereby the inherent stress of the one or more ion-implanted relaxed portions of stress layer portions is relaxed.

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