Selective silicon dioxide etchant for superconductor integrated

Details Selective silicon dioxide etchant for superconductor integrated Selective silicon dioxide etchant for superconductor integrated

1988-08-22

1990-02-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156657, 1566591, 20419224, 20419237, 252 791, 505816, B44C 122, C03C 1500, C03C 2506

Patent

active

049043412

ABSTRACT:
This is an improved method for providing silicon dioxide with openings which expose contact pad areas for connections to superconductor in the preparation of superconducting integrated circuits. It relates to the type of method which utilizes depositing of a silicon dioxide film on a substrate (including over superconductor conductor patterns on the substrate surface), placing a resist film on the silicon dioxide film, patterning the resist film to expose portions of the silicon dioxide, and reactive ion etching the exposed portions of the silicon dioxide film to expose contact pad areas of superconductor. The improvement utilizes an etchant gas consisting essentially of 50-95 volume percent nitrogen trifluoride and 5-50 volume percent rare gas (preferably about 77 volume percent nitrogen trifluoride, with argon or neon or mixtures thereof as the rare gas) for the reactive ion etching of the exposed portions of the silicon dioxide film. Thus a carbon-containig etchant is not used and polymer by-products of the etching process are essentially completely avoided.

REFERENCES:
patent: 4421785 (1983-12-01), Kroger
patent: 4423430 (1983-12-01), Hasuo et al.
patent: 4430662 (1984-02-01), Jillie
patent: 4498228 (1985-02-01), Jillie
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4554567 (1985-11-01), Jillie
patent: 4609903 (1986-09-01), Toyokura
patent: 4711698 (1987-12-01), Douglas
patent: 4807016 (1989-02-01), Douglas
Paper by S. Kosaka et al, Entitled "An Integration of all Refractor Josephson Logic LSI Circuit", IEEE Transactions on Magnetics, vol. MAG-21, No. 2, Mar. 1985, pp. 102-109.
M. Radparvar et al., "Fabrication and Performance of all NbN Josephson Junction Circuits", IEEE Trans. Mag., vol. MAG-23, No. 2, pp. 1480-1483, Mar. 1987.
L. S. Yu et al., "An All-Niobium Eight Level Process for Small and Medium Scale Applications", IEEE Trans. on Magnetics, vol. MAG-23, No. 2, pp. 1476-1479, Mar. 1987.
S. Kotani et al., "High-Speed Unit-Cell for Josephson LSI Circuits Using Nb/AlOx,Nb Junctions," IEEE Trans. on Magnetics, vol. MAG-23, No. 2, pp. 869-874, Mar. 1987.

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