Selective silicidation process using a titanium nitride protecti

Details Selective silicidation process using a titanium nitride protecti Selective silicidation process using a titanium nitride protecti

1989-05-11

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437246, 148DIG147, 148DIG113, H01L 21283

Patent

active

049200739

ABSTRACT:
The present invention provides a method for inhibiting the oxidation of a titanium layer during the direct reaction of the titanium with exposed silicon areas of an integrated circuit. In one embodiment of the present invention, a titanium nitride layer is formed on the surface of the titanium layer in the reactor where the titanium layer is deposited. The titanium nitride layer provides an effective barrier against oxidation. Thus, the formation of titanium dioxide is inhibited. In addition, in those areas where titanium nitride local interconnect is to be formed between diffused areas, the extra thickness provided by the top titanium nitride layer adds in the integrity of the conductive layers. By conducting the silicidation in a nitride atmosphere, diffusion of the nitride from the titanium nitride layer into the titanium layer and substitution of those lost nitrogen atoms by the atmosphere occurs thus providing a blocking layer for the formation of titanium silicide shorts.

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