Selective sidewall diffusion process using doped SOG

Details Selective sidewall diffusion process using doped SOG Selective sidewall diffusion process using doped SOG

1992-10-16

1994-05-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437158, 437231, 148DIG31, 257263, 257302, H01L 21225

Patent

active

053087909

ABSTRACT:
A selective sidewall diffusion process using doped SOG. A substrate is processed to form raised portions or pedestals, having sidewalls, and trenches. A first layer, either a doped SOG layer or undoped oxide layer, may be deposited onto the substrate adjacent the sidewalls. The first layer is densified. A second layer may be deposited on the first layer. The second layer is a doped SOG layer. The second layer is densified and the dopant is driven into the sidewalls to form shallow junctions.

REFERENCES:
patent: 3928225 (1975-12-01), Schafer
patent: 4355454 (1982-10-01), Tasch, Jr. et al.
patent: 4433008 (1984-02-01), Schnable et al.
patent: 4455325 (1984-06-01), Razouk
patent: 4571366 (1986-02-01), Thomas et al.
patent: 4603468 (1986-08-01), Lam
patent: 4606114 (1986-08-01), Kraus
patent: 4628589 (1986-12-01), Sundaresan
patent: 4661177 (1987-04-01), Powell
patent: 4755486 (1988-07-01), Treichel et al.
patent: 4782036 (1988-11-01), Becker et al.
patent: 4835113 (1989-05-01), Celler et al.
patent: 4837179 (1989-06-01), Foster et al.
patent: 4889492 (1989-12-01), Bardin et al.
patent: 4891331 (1990-01-01), Rapp
patent: 4996168 (1991-02-01), Ozaki et al.
patent: 5024959 (1991-06-01), Pfiester
patent: 5028564 (1991-07-01), Chang et al.
patent: 5047359 (1991-09-01), Eklund
patent: 5116778 (1992-05-01), Haskell et al.
Wolf, Stanley, "Silicon Processing for the VLSI Era: vol. 2", Lattice Press, Sunset Beach, Calif. (1990) pp. 229-233.

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