Selective removal of vertical portions of a film

Details Selective removal of vertical portions of a film Selective removal of vertical portions of a film

1998-04-02

2000-10-31

Fourson, George

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

438713, 438732, 438733, 438978, 438947, H01L 21311, H01L 2331

Patent

active

061396478

ABSTRACT:
A post-etch structure resulting in the inverse of a sidewall spacer etch, i.e. removal of the spacer. A vertical portion of a film is removed while leaving horizontal portions substantially intact. A facet is left in the film in register with an upper corner formed by the vertical and horizontal portions of the underlying body.

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Barklund, et al, "Influence of Different Etching Mechanisms on the Angular Dependence of Silicon Nitride Etching" J. Vac. Sci. Tech. A, V. 11, #4, pp. 1226-1229, Jul.-Aug., 1993.

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