Selective removal of vertical portions of a film

Details Selective removal of vertical portions of a film Selective removal of vertical portions of a film

1995-12-21

1998-06-16

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438696, 438388, 438436, 1566441, H01L 21311

Patent

active

057670170

ABSTRACT:
A body is provided with a substantially horizontal surface and a substantially vertical surface. A film is formed on the body with a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface, and a corner region joining the substantially horizontal and substantially vertical portions. The corner region and the substantially vertical portion of the film are removed while the body and the substantially horizontal portion of the film are left substantially intact. A high density plasma with a fluorocarbon-based etching gas may be used to remove the vertical portion and corner region.

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Barklund et al., "Influence of Different Etching Mechanisms on the Angular Dependence of Silicon Nitride Etching", J. Vac. Sci.Technol. A, vol. 11, No. 4, Jul./Aug. 1993, pp. 1226-1229.

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