Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-11-10
1999-09-07
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438730, 438738, H01L 2100
Patent
active
059487020
ABSTRACT:
A dry etch method for removing TixNy films by using a remote plasma to excite a oxygen+fluorine source gas mixture, generating active species that etch TixNy with minimum attack to other materials. In particular, an isotropic dry etch can be used for the selective removal of TiN in W/TiN gate structures without gate oxide damage. This etch also permits selective stripping of titanium nitride in a salicidation process.
REFERENCES:
patent: 5108542 (1992-04-01), Lin
patent: 5846880 (1998-12-01), Lee
patent: 5866484 (1999-02-01), Muto
Cotler, et al., "Plasma-Etch Technology", (Jul. 1990) IEEE Circuits and Devices Magazine, pp. 38-43.
Pearton, et al., "Hybrid Electron Cyclotron Resonance-RF Plasma Etching of TiN.sub.x Thin Films Grown by Low Pressure Rapid Thermal Metalorganic Chemical Vapour Deposition", Semiconductor Science and Technology (1991), pp. 830-832.
Donaldson Richard L.
Hoel Carlton H.
Powell William
Texas Instruments Incorporated
Valetti Mark A.
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