Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-09-19
1997-07-01
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 66, 134 1, 21912169, 21912184, 20419232, B08B 500, B08B 700, B23K 2600
Patent
active
056434723
ABSTRACT:
An apparatus and method for selectively removing undesired material from the surface of a substrate provides a flow of inert gas over the undesired material substrate surface while irradiating the undesired material with energetic photons. The invention enables removal of undesired material without altering the physical properties of the material underlying or adjacent the removed, undesired material. The invention can be applied to produce changes in surface topography (including nano-structuring and surface planarization).
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Engelsberg Audrey C.
Fitzpatrick Donna R.
Cauldron Limited Partnership
Dang Thi
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