Selective refractory metal and nitride capping

Details Selective refractory metal and nitride capping Selective refractory metal and nitride capping

2005-01-18

2005-01-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S650000

Reexamination Certificate

active

06844258

ABSTRACT:
A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

REFERENCES:
patent: 6174812 (2001-01-01), Hsiung et al.
patent: 6566250 (2003-05-01), Tu et al.
patent: 6566262 (2003-05-01), Rissman et al.
patent: 6706625 (2004-03-01), Sudijono et al.
Presentation by Inventor James Fair: “Chemical Vapor Deposition of Refractory Metal Silicides,” 27 Pages, 1983.
Saito et al., “A Novel Copper Interconnection Technology Using Self Aligned Metal Capping Method,” IEEE, 3 Pages, 2001.

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