Selective reactive ion etching of polysilicon against SiO.sub.2

Details Selective reactive ion etching of polysilicon against SiO.sub.2 Selective reactive ion etching of polysilicon against SiO.sub.2

1979-02-21

1980-07-29

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, 252 791, H01L 21308

Patent

active

042149460

ABSTRACT:
Disclosed is an improved Reactive Ion Etch (RIE) technique for etching polysilicon or single crystal silicon as must be done in Very Large Scale Integration (VLSI) using silicon technology. It teaches the use of an etch gas that consists of a mixture of sulfur hexafluoride (SF.sub.6) and chlorine (Cl.sub.2) diluted with inert gas. This etch gas allows an RIE process which combines the very desirable features of selectivity (high Si/SiO.sub.2 etch rate ratio) and directionality which creates vertical side walls on the etched features. Vertical side walls mean no mask undercutting, hence zero etch bias.
It is particularly applicable to device processing in which micron or sub-micron sized lines must be fabricated to extremely close tolerances. It is a distinct improvement over wet chemical etching or plasma etching as it is conventionally applied.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4104090 (1978-08-01), Pogge
patent: 4157269 (1979-06-01), Ning et al.
patent: 4159915 (1979-07-01), Anantha et al.
Logan et al., "Method . . . Devices" IBM Technical Disclosure Bull. vol. 21, No. 4 (9/78) pp. 1466-1467.
Bondur et al., "RF . . . Gas" IBM Technical Disclosure Bull. vol. 18, No. 6 (11/75) p. 1897.
Coburn "Increasing . . . Si " IBM Technical Disclosure Bull. vol. 20, No. 2 (7/77) p. 757.

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