Selective processing using a hydrocarbon and hydrogen

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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437228, 20419235, H01L 2100, H01L 21465

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active

054784379

ABSTRACT:
A layer is plasma etched or deposited with a gaseous mixture of a hydrocarbon, hydrogen and a noble gas. A cathode DC bias of greater than 600 V is used. This cathode DC bias allows for selectively etching a III-V material over an aluminum containing layer or for the deposition of a hydrogenated carbon film.

REFERENCES:
patent: 5068007 (1991-11-01), Rogers et al.
patent: 5074955 (1991-12-01), Henry et al.
patent: 5171401 (1992-12-01), Roselle
patent: 5185293 (1993-02-01), Franke et al.
patent: 5298466 (1994-03-01), Brasseur
"Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C.sub.2 H.sub.6 /H.sub.2 " Pearton et al. J. Appl. Phys. 66(10), 15 Nov. 1989. pp. 5009-5017.
"Alkane based plasma etching of GaAs" Law et al. J. Vac. Sci. Technol. B, vol. 9, No. 3, May/Jun. 1991 pp. 1449-1455.
L. Henry et al., "GainAS Junction FET Fully Dry Etched by Metal Organic Reactive Ion Etching Technique", Electron Lett., 23, pp. 1254-1255.
V. Law et al., "Selective metalorganic reactive ion etching of molecular-beam epitaxy GaAs/Al.sub.x Ga.sub.1-x As", V. Vac. Sci. Technol. B7(6), Nov./Dec. 1989, pp. 1479-1482.
Vatus et al., "Highly Selective Reactive Ion Etching Applied to the Fabrication of Low-Noise A1GaAs GaAs FET's", IEEE Transactions on Electron Devices, vol. ED-33, No. 7, Jul. 1986, pp. 934-937.
R. Pereira et al. "CH.sub.4 /H.sub.2 reactive ion etching for gate recessing of pseudamorphic modulation doped field effect transistors", J. Vac. Sci. Technol. B9(4), Jul./Aug. 1991 pp. 1978-1980.
G. McLane et al., "Magnetron-enhanced reactive ion etching of GaAs and AlGaAs using CH.sub.4 /H.sub.2 /Ar", J. Vac. Sci. Technol. A (11(4), Jul./Aug. 1993, pp. 1753-1757.
N. Cameron et al., "An investigation of CH4/H2 reactive ion etching damage to thin heavily doped GaAs metal-semiconductor field effect transistor layers during gate recessing", J. Vac. Sci. Technol. B 8(6), Nov./Dec. 1990, pp. 1966-1969.

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