Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S908000
Reexamination Certificate
active
06974990
ABSTRACT:
A memory cell includes either a bit line contact feature or a word line space feature that are each characterized by a contact hole bounded by insulating side walls. The contact hole is filled with a conductively doped polysilicon plug defining an upper plug surface profile that is substantially free of concavities.
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Blum David S.
Dinsmore & Shohl LLP
Micro)n Technology, Inc.
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