Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-01
2005-03-01
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S905000, C257S907000, C257S908000
Reexamination Certificate
active
06861691
ABSTRACT:
A memory cell includes a bit line contact feature that is characterized by a contact hole bounded by insulating side walls including first and second pairs of opposing insulating side walls. The first pair of opposing insulating side walls comprises respective layers of insulating spacer material formed over a conductive line. The second pair of opposing insulating side walls comprises respective layers of insulating material formed between respective contact holes. The contact hole is filled to an uppermost extent of the insulating side walls with a conductively doped polysilicon plug defining a substantially convex upper plug surface profile. The contact hole may define either a bitline contact or a storage node contact.
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Blum David S.
Dinsmore & Shohl LLP
Micro)n Technology, Inc.
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