Selective polymer growth for memory cell fabrication

Details Selective polymer growth for memory cell fabrication Selective polymer growth for memory cell fabrication

2006-11-28

2006-11-28

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S313000, C257S314000, C257SE51003

Reexamination Certificate

active

07141844

ABSTRACT:
Systems and methodologies of growing an active layer (e.g., a polymer layer) for a memory cell via catalyst points of a self assembled monolayer (SAM). The self assembled monolayer can act as a site that anchors a subsequent growth of polymer chain reactions, via the presence of the DPA that reacts with the active catalyst spots. The DPA can react with a surface of the self assembled monolayer to form an active layer of the polymer memory cell.

REFERENCES:
patent: 2006/0038169 (2006-02-01), Mandell et al.
D. Fu, et al. “Solventless Polymerization at the Gas-Solid Interface to Form Polymeric Thin Films”, Advanced Materials, 2002. vol. 14 ,Issue 5, pp. 339-343.

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