Selective plasma polysilicon etching

Details Selective plasma polysilicon etching Selective plasma polysilicon etching

1981-04-20

1982-10-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156345, 204192E, 204298, 252 791, H01L 21306

Patent

active

043537774

ABSTRACT:
A process for etching polysilicon material preferentially over silicon oxide. The process is anisotropic and employs a moderate to low pressure of Freon 11 (CFCl.sub.3) in an RF plasma discharge. In a second embodiment helium is mixed with the Freon 11 to inhibit degradation of the photoresist mask.

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LFE Corporation, Plasma Systems, Bulletin 8277-PB1 dated Feb. 1979.

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