Selective plasma etching of silicon nitride in the presence of s

Details Selective plasma etching of silicon nitride in the presence of s Selective plasma etching of silicon nitride in the presence of s

1984-12-20

1986-02-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

045684103

ABSTRACT:
Silicon nitride can be etched at a rapid rate selectively against oxide in a gas plasma formed from a gas mixture comprising 10-20 parts NF.sub.3 to 20-35 parts O.sub.2, by volume. Silicon nitride etch rates in the range 55 to 75 milli-microns per minute are obtained at nitride/oxide etch rate ratios of 8-11:1. In contrast to the prior art methods, the invented gas system contains no carbon. Hence, deposition of carbon complexes on the substrate wafers or reactor walls during nitride etching is avoided. The NF.sub.3 +O.sub.2 gas mixture also etches common resists.

REFERENCES:
patent: 4314875 (1982-02-01), Fhamm
patent: 4484979 (1984-11-01), Stocker
patent: 4529476 (1985-07-01), Kawamoto et al.

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