Selective plasma etching of silicon nitride in presence of silic

Details Selective plasma etching of silicon nitride in presence of silic Selective plasma etching of silicon nitride in presence of silic

1997-06-03

1999-03-02

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 216 67, 252 791, 438724, 438738, 438744, H01L 2100

Patent

active

058770909

ABSTRACT:
An RIE method and apparatus provides uniform and selective etching through silicon nitride material of a supplied workpiece such as a silicon wafer having silicon oxide adjacent to the SiN. A plasma-maintaining gas that includes N.sub.2 having an inflow rate of at least 10 sccm is used to provide etch-depth uniformity across the workpiece. The plasma-maintaining gas further includes HBr and one or both of NF.sub.3 and SF.sub.6.

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Lee M. Loewenstein, Selective etching of silicon nitride using remote plasmas of CF.sub.4 and SF.sub.6, May/Jun. 1989 J. Vac. Sci. Technol. A7(3), pp. 686-690.

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