Selective plasma etching during formation of integrated circuitr

Details Selective plasma etching during formation of integrated circuitr Selective plasma etching during formation of integrated circuitr

1986-02-21

1987-08-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156653, 156657, 1566591, 20419232, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

046875433

ABSTRACT:
A method is disclosed for removing (etching) an insulating layer form an electrically semiconductive material wherein a volatile fluoride is substituted for a hydrocarbon in gases for selective plasma discharges. The removing is done without polymer build-up and loss of selectivity.

REFERENCES:
patent: 4418094 (1983-11-01), See et al.
patent: 4455193 (1984-06-01), Jeuch et al.
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4501061 (1985-02-01), Wonnacott
patent: 4601782 (1986-07-01), Bianchi et al.
Whitcomb, Selective, Anisotropic Etching of SiO.sub.2 and PSG in a CHF.sub.3 /SF.sub.6, RIE Plasma, Conference: Electrochemical Society Incorporated, Spring Meeting, May 9-14, 1982, Abstract No. 211, pp. 339-340.

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