Selective oxidation process

Details Selective oxidation process Selective oxidation process

1998-02-06

1999-07-13

Brown, Peter Toby

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438443, 438452, H01L 2176

Patent

active

059239948

ABSTRACT:
A selective oxidation process includes conducting a former phase of an oxidation process employing a thick mask layer to produce an oxide layer having a thickness less than the finished thickness of a desired semiconductor device isolation insulator. Then the thickness of the mask layer is reduced and a latter phase of the oxidation process using the reducing thickness mask layer is performed to produce the desired semiconductor device isolation insulator having the ultimate thickness. The use of both a thick mask layer and a reduced thickness mask layer for various phases of the oxidation process limits both the growth of the bird's beak and the growth of crystalline defects in the bird's beak.

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