Semiconductor device manufacturing: process – Making device array and selectively interconnecting
Reexamination Certificate
2005-10-04
2005-10-04
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
C438S130000, C438S131000
Reexamination Certificate
active
06951780
ABSTRACT:
The present invention relates to use of selective oxidation to oxidize silicon in the presence of tungsten and/or tungsten nitride in memory cells and memory arrays. This technique is especially useful in monolithic three dimensional memory arrays. In one aspect of the invention, the silicon of a diode-antifuse memory cell is selectively oxidized to repair etch damage and reduce leakage, while exposed tungsten of adjacent conductors and tungsten nitride of a barrier layer are not oxidized. In some embodiments, selective oxidation may be useful for gap fill. In another aspect of the invention, TFT arrays made up of charge storage memory cells comprising a polysilicon/tungsten nitride/tungsten gate can be subjected to selective oxidation to passivate the gate polysilicon and reduce leakage.
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Dang Trung
Matrix Semiconductor Inc.
Matrix Semiconductor, Inc
Squyres Pamela J.
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