Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-10-24
1992-02-11
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156643, 156657, 1566591, 1566611, 156662, 427 38, 427282, 427309, 437 20, 437203, 437228, 437243, 357 65, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
050873229
ABSTRACT:
A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor deposition. The method includes a lithographic step to define the area on the semiconductor surface where the CVD material is to be deposited. Thereafter, a beam of refractory metal ions is directed onto the defined area to damage the semiconductor material surface so that it will react with CVD gases. The contact metal is then deposited on the damaged surface by chemical vapor deposition, so that the metal seeds on the damaged exposed surface of the semiconductor to permit direct formation of metallization on that surface.
REFERENCES:
patent: 4307179 (1981-12-01), Chang
patent: 4339869 (1982-07-01), Reihl
patent: 4344980 (1982-08-01), Yoder
patent: 4347264 (1982-08-01), Lindmayer
patent: 4351892 (1982-09-01), Davis
patent: 4378383 (1983-03-01), Moritz
patent: 4383869 (1983-05-01), Liu
patent: 4393577 (1983-07-01), Imai
patent: 4396458 (1983-08-01), Platter
patent: 4526624 (1985-07-01), Tombrello
patent: 4531144 (1985-07-01), Holmberg
patent: 4556628 (1985-12-01), Greschner
patent: 4570324 (1986-02-01), Smith
patent: 4581098 (1986-04-01), Gregor
patent: 4673968 (1987-06-01), Hieber et al.
patent: 4696098 (1987-09-01), Yen
patent: 4698113 (1987-10-01), Ogawa
patent: 4746621 (1988-05-01), Thomas
patent: 4907066 (1990-03-01), Thomas
Hochst, Electronic Structure and Thermal Stability of Ni/SiC(100) Interfaces, Synchrotron Radiation Center, Univ. of Wis., Apr. 1988.
Rathman, High-Temp. Point-Contact Transistors and Schottky Diodes Formed on Boron-Doped Diamond, IEEE Electron Device Ltrs., vol. EDL 8, No. 4, 1987.
Daimon, Operation of Schottky-Barrier Field-Effect Transistors of 3C-SiC up to 400.degree. C., Electrotechnical Laboratory, Japan, 1987.
Palmour, High-Temperature Depletion-Mode Metal-Oxide-Semiconductor Field-Transistors in Beta-SiC Thin Films, Dept. of Mat. Sci. & Engr., N.C. State University, 1987.
Prins, Bipolar Transistor Action in Ion Implanted Diamond, Nuclear Physics Research Unit, Univ. of Witwatersrand, Rep. of S. Africa, 1982.
Barton, A Two Level Metal CMOS Process ror VLSI Circuits, Semiconductor International, 1985.
Wilson, Highly Selective, High Rate Tungsten Deposition, Materials Research Society, 1985.
Moriya, A Planar Metallization Process-Its Application to Tri-Level, IEDM 83, 550-553.
Comeau Gerald
Lillienfeld David
Smith Paul
Soave Robert
Thomas David
Cornell Research Foundation Inc.
Powell William A.
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