Selective metal etching in metal/polymer structures

Details Selective metal etching in metal/polymer structures Selective metal etching in metal/polymer structures

1985-10-31

1987-08-04

Cintins, Ivars

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

B44C 122

Patent

active

046844376

ABSTRACT:
A differential material removal process wherein a selected material can be rapidly removed without adverse impact to surrounding layers of different materials. Ultraviolet radiation is used to selectively remove metal without adversely harming adjacent polymer layers, in a metal-polymer multilayer structure. The wavelength (100-400 nm) of the ultraviolet radiation and the energy fluence per pulse are selected so that the removal rate of metal due to thermal processes is significantly greater than the removal rate of the polymer by ablative photodecomposition. This can occur at an energy fluence per pulse level greater than that at which the etch rate of the polymer begins to level off. For example, copper of a thickness less than 5 microns is rapidly etched in one or two pulses while adjacent polyimide layers are substantially unetched by the application of ultraviolet pulses of wave-lengths 248-351 nm, at energy fluences per pulse in excess of approximately 3 or 4 J/cm.sup.2.

REFERENCES:
patent: 4414059 (1983-11-01), Blum et al.
patent: 4490211 (1984-12-01), Chen et al.
patent: 4568632 (1986-02-01), Blum et al.

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