Selective isotropic etch for titanium-based materials

Details Selective isotropic etch for titanium-based materials Selective isotropic etch for titanium-based materials

2006-07-18

2006-07-18

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S689000

Reexamination Certificate

active

07078337

ABSTRACT:
A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.

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