Selective i-line BARL etch process

Details Selective i-line BARL etch process Selective i-line BARL etch process

1997-05-01

1998-09-15

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438736, 216 49, H01L 2100

Patent

active

058077901

ABSTRACT:
A photolithographic substrate mask patterning method which enables the reduction of changes in critical dimensions which occur in prior art etching of organic photoresist and the underlying organic i-line bottom anti-reflection layer (BARL) on a non-planar substrate. Based on the minor difference in the total carbon and oxygen content between the organic photoresist and the organic BARL, a differential in polarization is achieved using a pure N.sub.2 plasma for ion etching at certain selected conditions and a selectivity is achieved between the etch rate of the organic photoresist as compared to the etch rate of the organic BARL.

REFERENCES:
patent: 5688365 (1997-11-01), Ogoshi
Patent Abstracts of Japan, vol. 013 No. 253 (P-883), 13 Jun. 1989 & JP,A,01 052142 (Nippon Telegr & Teleph Corp) 28 Feb. 1989.

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