Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000
Reexamination Certificate
active
07087949
ABSTRACT:
A method used to form a semiconductor device comprises forming a layer such as a container capacitor layer having a bottom plate layer. The bottom plate layer is formed to define a receptacle, and a rim which defines an opening to an interior of the receptacle. The bottom plate layer is formed to have a smooth texture. Subsequently, an inhibitor layer is formed on the rim of the bottom plate layer while a majority of the receptacle defined by the bottom plate layer remains free from the inhibitor. With the inhibitor layer on the rim of the bottom plate layer, at least a portion of the receptacle is converted to have a rough texture, such as to hemispherical silicon grain (HSG) polysilicon, while subsequent to the conversion the smooth texture of the rim which defines the opening to the interior of the receptacle remains. A resulting structure is also described.
REFERENCES:
patent: 6121084 (2000-09-01), Coursey
patent: 6133109 (2000-10-01), Nam
patent: 6177310 (2001-01-01), Lin et al.
patent: 6287935 (2001-09-01), Coursey
patent: 6403442 (2002-06-01), Reinberg
patent: 6404005 (2002-06-01), DeBoer et al.
patent: 6538274 (2003-03-01), Zheng et al.
patent: 6617222 (2003-09-01), Coursey
patent: 6693320 (2004-02-01), DeBoer et al.
patent: 6781183 (2004-08-01), Cho et al.
Martin Kevin D.
Prenty Mark V.
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