Selective heating using flash anneal

Details Selective heating using flash anneal Selective heating using flash anneal

2007-10-02

2007-10-02

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S687000, C257SE21077, C257SE21347

Reexamination Certificate

active

11061712

ABSTRACT:
A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 μm, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.

REFERENCES:
patent: 6103624 (2000-08-01), Nogami et al.
patent: 6623799 (2003-09-01), Lee et al.
patent: 6746969 (2004-06-01), Shimada et al.
patent: 6809035 (2004-10-01), Yoo
patent: 6849831 (2005-02-01), Timans et al.
patent: 6951996 (2005-10-01), Timans et al.

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