Selective heating using flash anneal

Details Selective heating using flash anneal Selective heating using flash anneal

2005-06-28

2005-06-28

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S918000, C438S967000

Reexamination Certificate

active

06911376

ABSTRACT:
A process, which includes implanting hydrogen ions into a silicon substrate, overlaying the silicon substrate on to a support substrate, and applying a flash anneal heat treatment to the silicon and support substrates to cause the silicon substrates to separate at a region defined by the implanted hydrogen ions.

REFERENCES:
patent: 5141894 (1992-08-01), Bisaro et al.
patent: 5281543 (1994-01-01), Fukuzawa et al.
patent: 6211041 (2001-04-01), Ogura
patent: 6313014 (2001-11-01), Sakaguchi et al.
patent: 6806170 (2004-10-01), Ward et al.
Stanley Wolf and Richard N. Tauber, Silicon Processing For The VLSI Era, 2000, Lattice Press, Second Edition, pp. 259-261.

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