Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask is exposed to nonimaging radiation
Patent
1993-06-07
1995-06-06
Breneman, R. Bruce
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
Mask is exposed to nonimaging radiation
216 99, 216 87, H01L 2100
Patent
active
054219582
ABSTRACT:
A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO.sub.3 :H.sub.2 O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70% the porous silicon pattern emits visible light at room temperature.
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Fathauer Robert W.
Jones Eric W.
Breneman R. Bruce
Goudreau George
Jones Thomas H.
Kusmiss John H.
Miller Guy M.
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