Selective formation of boron-containing metal cap pre-layer

Details Selective formation of boron-containing metal cap pre-layer Selective formation of boron-containing metal cap pre-layer

2011-07-12

2011-07-12

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21576, C257SE21591, C438S687000

Reexamination Certificate

active

07977791

ABSTRACT:
An interconnect structure with improved reliability is provided. The interconnect structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metallic wiring in the dielectric layer; a pre-layer over the metallic wiring, wherein the pre-layer contains boron; and a metal cap over the pre-layer, wherein the metal cap contains tungsten, and wherein the pre-layer and the metal cap are formed of different materials.

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patent: 100705936 (2007-04-01), None

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