Selective formation of a compound comprising a...

Details Selective formation of a compound comprising a... Selective formation of a compound comprising a...

2008-09-29

2010-11-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21440

Reexamination Certificate

active

07842612

ABSTRACT:
An area made from a compound of a metallic material and semi-conducting material is produced selectively in a substrate made from semi-conducting material by previously forming a germanium oxide layer with a thickness comprised between 3 nm and 5 nm over a predefined part of a surface of the substrate and a silicon oxide layer on the rest of the surface. A metallic layer is deposited on the oxide layers. The metallic material is chosen such that its oxide is thermodynamically more stable than germanium oxide and thermodynamically less stable than silicon oxide. Thermal annealing is then performed to obtain reduction of the germanium oxide by said metallic material followed by formation of the compound, at the level of said part of the surface of the substrate. The metallic layer is then removed.

REFERENCES:
patent: 6399467 (2002-06-01), Erhardt et al.
patent: 6872610 (2005-03-01), Mansoori et al.
patent: 2005/0215055 (2005-09-01), Bu et al.
patent: 2007/0099408 (2007-05-01), Aime et al.
Nemouchi et al. A comparitive study of nickel silicides and nickel germanides: Phase formation and kinetics. Microelectronic Engineering 83 (Oct. 2006) 2101-2106.

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