Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2004-10-04
2008-03-04
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S588000, C438S592000, C438S631000, C438S633000, C438S645000, C438S723000, C216S067000, C216S072000, C216S079000, C257S295000, C257S310000, C257S369000, C257S752000
Reexamination Certificate
active
07338907
ABSTRACT:
A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.
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Burgholzer Mark A.
Hill Ray A.
Hsu Sheng Teng
Li Tingkai
Ulrich Bruce D.
Angadi Maki
Norton Nadine G.
Sharp Laboratories of America Inc.
Sharp Laboratories of America, Inc.
Varitz Robert
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