Selective etching process for boron nitride films

Details Selective etching process for boron nitride films Selective etching process for boron nitride films

1992-02-27

1993-06-08

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156654, 156657, 437236, H01L 2100

Patent

active

052175677

ABSTRACT:
Disclosed is a process for etching a film of boron nitride with high selectivity to a layer of silicon dioxide or silicon nitride. The process involves exposing the film to a plasma formed from a mixture of an oxygen-containing gas, such as oxygen, and a small amount of a fluorine-containing gas, such as CF.sub.4. The process provides a high etch rate and anisotropic profiles, as well as good uniformity.

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