Selective etching process

Details Selective etching process Selective etching process

1989-08-24

1990-05-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 156662, 252 792, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

049235648

ABSTRACT:
An etching process is described for etching aluminum containing III-V semiconductor compounds. The etch solution contains dichromate ion in acid aqueous solution in which the acid is either phosphoric acid or sulfuric acid. The etch solution is highly selective in that it etches the aluminum containing III-V semiconductor compounds without etching significantly other III-V semiconductor compounds not containing aluminum exposed to the same etching solution. the etching process is extremely useful in fabricating a variety of III-V semiconductor devices including heterojunction bipolar transistors, heterojunction field effect transistors and self-enhanced electro optic devices.

REFERENCES:
patent: 4049488 (1977-09-01), Tijburg
GaAs-GaAlAs Heterojunction Transistor for High Frequency Operation, by W. P. Dumke, et als, Solid-State Electronics, 1972, vol. 15, pp. 1339-1343.
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Extreme Selectivity in the Lift-Off of Epitaxial GaAs Films, by E. Yablonovitch, et als, Appl. Phys. Lett. 51, (26), Dec. 28, 1987, pp. 2222-2224.
The Etching of Ga.sub.0.7 Al.sub.0.3 As Using KI-I.sub.2, by A. C. Wismayer, et al., Materials Letters, May 1988, vol. 6, No. 8.9, pp. 284-286.
Chemical Etching of (100) GaAs in the (NH.sub.4).sub.2 Cr.sub.2 O.sub.7 -H.sub.2 SO.sub.4 Cl-H.sub.2 O System, by I. Barycka, et al., Journal of Material Science 21, (1986), pp. 2153-2158.
A New Etchant System, K.sub.2 CO.sub.2 O.sub.7 -H.sub.2 SO.sub.4 -HCI for GaAs and InP, by S. Adachi, et al., Journal of Materials Science 16, (1981), pp. 2449-2456.
Defect-Selective Etching of GaAs in CrO.sub.3 -HCI Solutions, by J. van de Ven, et al., Chemtronics, 1986, vol. 1, Mar., pp. 19-26.
The Mechanism of GaAs Etching in CrO.sub.3 -HF Solutions, by J. van de Ven, et als, Journal of Electrochemical Society, 132, p. 3020 (1985).
Chemical Etching of GaAs, by S. Adach, et al., Journal of the Electrochemical Society:Solid State Science and Technology, 131, No. 1, pp. 126-130 (1984).

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